Ir2110 High Speed Power Mosfet

We are Distributing and Supplying of IR2110 High Speed Power MOSFET in Shenzhen, Guangdong, China. Features and Descriptions as given below:-

Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
Features
Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground A 5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs