Mosfet Fds86242 Semiconductor

About MOSFET FDS86242 Semiconductor:-

Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250AuA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): A 20V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 75V

FET Feature:
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55A C ~ 150A C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)