Rjp30h1 Transistor

Our organization is widely preferred in supplying a superior quality array of RJP30H1 Transistor in Shenzhen, Guangdong, China. Our complete range of transistor is as per the set industrial standard and quality. With the assistance of skilled and dedicated professionals, we are able to cater diverse requirements of the clients in most efficient manner.

Collector to emitter voltage VCES 360 V
Gate to emitter voltage VGES A 30 V
Collector current IC 30 A
Collector peak current ic(peak) Note1 200 A
Collector dissipation PC Note2 40 W
Junction to case thermal impedance qj-c 3.13 A C/W
Junction temperature Tj 150 A C
Storage temperature Tstg a 55 to +150 A C

Features
> Trench gate and thin wafer technology (G6H-II series)
> High speed switching: tr = 80 ns typ., tf = 150 ns typ.
> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
> Low leak current: ICES = 1 mA max.

Applications
MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine,
AC servomotor and general purpose.